منابع مشابه
Calculation of dielectric constant and loss of two-phase composites
The field distribution, dielectric constant, and loss in a two-phase composite, in which phase A is distributed inside a square matrix of phase B, have been calculated using the finite-element method ~FEM!. The calculation was carried out by taking into account different shapes for phase A, such as circles, triangles, and rings with different sizes. The modeling by FEM in the dielectric composi...
متن کاملMeasurement of Dielectric Constant and Loss Factor of the Dielectric Material at Microwave Frequencies
A new technique to evaluate the dielectric constant and loss factor of a homogeneous dielectric material using rectangular shaped perturb cavity has been developed. The values of S-parameters are measured experimentally by placing the sample in the center of the cavity resonator. Sample under test is fabricated in the form of a cylinder. The real and imaginary part of the permittivity can be th...
متن کاملDielectric Constant and Loss Factor of Dielectric Material Using Finite Element Method in a Cavity
A numerical technique to estimate the dielectric constant and loss factor of a homogeneous dielectric material placed in an arbitrary shaped cavity has been developed. The values of S-parameters are measured experimentally by placing the sample in the cavity. Starting with a trial set of permittivity values, the computation is carried out using the finite element technique (FEM) to match the Sp...
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Introduction The dielectric constant of PCB material is important in determining the trace width required to produce a characteristic impedance of 50 ohms, or any other desired impedance. The most commonly used material, FR-4, has a dielectric constant that may vary widely between manufacturers or batches, and also varies over frequency. It is useful to have a method to determine the dielectric...
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The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
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ژورنال
عنوان ژورنال: Nature
سال: 1956
ISSN: 0028-0836,1476-4687
DOI: 10.1038/177862b0